炭化ケイ素市場 : デバイス (SiC ディスクリートデバイス、SiC モジュール)、ウェーハサイズ (最大 150 MM、>150 MM)、エンドユース 用途 (自動車、エネルギーと電力、輸送、産業、電気通信)、 地域別 – 2028年までの世界予測
Silicon Carbide Market by Device (SiC Discrete Device, SiC Module), Wafer Size (Up to 150 MM, >150 MM), End-Use Application (Automotive, Energy & Power, Transportation, Industrial, Telecommunications) and Region – Global Forecast to 2028
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The global silicon carbide market was valued at USD 1.8 billion in 2022 and is projected to reach USD 11.1 billion by 2028; it is expected to register a CAGR of 36.4% during the forecast period. Higher mechanical, electrical, and thermal properties of SiC than regular silicon is driving the growth of the silicon carbide market, whereas availability of substitute materials such as gallium nitride are restraining the growth of silicon carbide market.
The silicon carbide market is dominated by a few globally established players such as STMicroelectronics N.V. (Switzerland); Infineon Technologies AG (Germany); WOLFSPEED, INC. (North Carolina); ON Semiconductor Corporation (Arizona); ROHM Co., Ltd. (Kyoto). The study includes an in-depth competitive analysis of these key players in the silicon carbide market, with their company profiles, recent developments, and key market strategies.