半導体CVD装置市場シェア分析、業界動向と統計、成長予測 2026-2031年

半導体CVD（化学気相成長）装置市場の規模は、2026年に167億1,000万米ドルと推定され、予測期間（2026～2031年）において年平均成長率（CAGR）5.62%で推移し、2031年には219億6,000万米ドルに達するとMordor Intelligenceでは予測しています。

3nm（ナノメートル）未満のロジック半導体、炭化ケイ素（SiC）や窒化ガリウム（GaN）を用いたパワー半導体、そして300層を超える3D-NANDに関する大規模な設備投資計画が、新規装置出荷の4分の3を支えています。また、CHIPS法に類する支援策によって2024年以降27件もの新規工場（グリーンフィールド・ファブ）建設が発表されたことも市場の追い風となっており、GAA（ゲート・オール・アラウンド）トランジスタの普及に伴い、ALD（原子層堆積）とCVDを組み合わせたハイブリッド・プラットフォームの市場も拡大しています。供給側では、Applied Materials、Lam Research、東京エレクトロンがプラズマ源の設計や前駆体（プリカーサー）供給制御の改良を続け、アスペクト比100:1を超える能力を実現していますが、一方で中国企業が欧米の競合他社より30～40%低い価格設定でレガシーノード（成熟世代）向けの受注を獲得しています。装置コストの上昇と輸出規制の強化は、市場全体の成長軌道を抑制する2つの構造的な逆風となっています。

レポートの主なポイント

• 装置構成別では、2025年の半導体CVD装置市場において枚葉式（シングルウェーハ）クラスター装置が45.09%のシェアを占めましたが、バッチ式縦型炉も2031年までCAGR 6.18%で成長すると予測されています。
• ウェーハサイズ別では、2025年の売上高において300mm対応装置が69.34%を占めて圧倒的なシェアを誇り、黎明期にある450mm対応装置のカテゴリーはCAGR 5.81%で拡大すると見込まれています。
• 用途別では、2025年の売上高の41.64%をファウンドリが占めました。パワー半導体およびアナログ半導体向けファブは最も急成長しているセグメントであり、2031年に向けてCAGR 6.04%で推移すると予測されています。
• エンドユーザー別では、2025年の需要の52.61%を専業ファウンドリ（ピュアプレイ・ファウンドリ）が創出しましたが、ファブレス企業や研究開発機関による需要もCAGR 6.66%で成長すると見込まれています。
• 地域別では、アジア太平洋地域が2025年の収益の47.57%を占め、2031年にかけて年平均成長率（CAGR）7.83%で拡大すると予測されています。

装置構成別：枚葉式が市場を牽引、バッチ式炉も急伸

2025年の導入実績において、枚葉式クラスター装置は45.09%を占め、最先端ロジックおよびメモリの技術ロードマップを支える基盤となっています。一方、バッチ式縦型炉は年平均成長率（CAGR）6.18%での拡大が見込まれています。これは、28nmおよび40nm世代のアナログ半導体工場において、プロセス精度をある程度犠牲にする代わりに、ウェーハあたりのコストを40～50%削減する動きが進んでいるためです。デュアルチャンバー・クラスター装置は、スループットと柔軟性を両立させ18%のシェアを確保しました。また、プラネタリー型リアクターは12%を占め、その大部分は化合物半導体向けMOCVD用途でした。残りは、従来型のシングルチャンバー装置やパイロット用装置が占めました。

GAA（Gate-All-Around）デバイスではウェーハ面内均一性1%以下が達成されており、最先端領域における枚葉式装置の重要性が確固たるものとなっています。とはいえ、世界のウェーハ投入量構成比において成熟世代（レガシーノード）が依然として72%を占めており、±5%の許容範囲で十分な工程では、縦型炉がシェアを回復しています。デュアルチャンバー設計は、ALD（原子層堆積）とCVD（化学気相成長）を組み合わせた積層プロセスにおいて人気が高まっており、サイクルタイムを30%短縮しています。プラネタリー型リアクターはLEDのエピタキシャル成長用途では依然として競争力を維持していますが、GaNパワーデバイスの分野では枚葉式装置による市場侵食に直面しています。

エンドユーザー別動向：専業ファウンドリが市場を主導、ファブレス機関の動きも加速

専業ファウンドリは2025年の売上高の52.61%を占め、そのうちTSMC単独で世界全体の3分の1近くに達しました。約28%を占めるIDM（垂直統合型デバイスメーカー）は、自社向けのロジックおよびアナログ製造ラインを併用しています。メモリメーカーは約14%を占め、ファブレス設計企業や研究機関の寄与度は約5%にとどまりますが、チップレット開発拠点の増加に伴い、年率6.66%の成長が見込まれています。

ファウンドリの設備投資（Capex）シェアは40%近辺で推移するものの、成熟世代（レガシーノード）のラインでは既存クラスターの最適化が図られるため、成長のペースは鈍化する見通しです。一方、ファブレス機関は市場投入までの期間を短縮するためにパイロット生産能力を内製化しており、サブオングストローム単位の制御が可能な小ロット対応のALD-CVDハイブリッド装置を導入しています。IDMは自社の工場を外部顧客に開放する動きを見せており、多用途に対応可能なデュアルチャンバー装置が求められています。メモリ関連の投資は依然として景気循環の影響を受けやすく、NANDの積層数変更（世代交代）のたびにピークを迎える傾向があります。これに対し、大学などの研究機関では、次世代材料の試験用に常圧CVD装置が活用されています。

Semiconductor CVD Equipment Market Analysis by Mordor Intelligence

The Semiconductor CVD Equipment Market size is estimated at USD 16.71 billion in 2026, and is expected to reach USD 21.96 billion by 2031, at a CAGR of 5.62% during the forecast period (2026-2031).

Strong capital-expenditure plans for sub-3-nanometer logic, silicon-carbide and gallium-nitride power semiconductors, and greater than 300-layer 3D-NAND collectively underpin three-quarters of new tool shipments. The semiconductor chemical vapor deposition equipment market is also benefiting from CHIPS-style incentives that have unlocked 27 greenfield fab announcements since 2024, while hybrid ALD-CVD platforms are expanding their addressable market as gate-all-around transistors become mainstream. On the supply side, Applied Materials, Lam Research, and Tokyo Electron continue to refine plasma-source designs and precursor-delivery controls that extend aspect-ratio capabilities beyond 100:1, yet Chinese entrants are winning mature-node orders by pricing 30-40% below Western peers. Tool cost inflation and tightening export rules remain the two structural headwinds that moderate the overall growth trajectory.

Key Report Takeaways

• By equipment configuration, single-wafer clusters commanded 45.09% of the semiconductor CVD equipment market size in 2025, whereas batch vertical furnaces are advancing at a 6.18% CAGR through 2031.
• By wafer size, 300 millimeter tools dominated with 69.34% of revenue in 2025 and the nascent 450 millimeter category is projected to expand at a 5.81% CAGR.
• By application, foundries held 41.64% of 2025 revenue; power and analog fabs represent the fastest-growing segment at a 6.04% CAGR toward 2031.
• By end-user type, pure-play foundries generated 52.61% of demand in 2025, while fabless and R&D institutes are expected to grow at a 6.66% CAGR.
• By geography, Asia-Pacific secured 47.57% of 2025 revenue and is projected to accelerate at a 7.83% CAGR through 2031.

Note: Market size and forecast figures in this report are generated using Mordor Intelligence’s proprietary estimation framework, updated with the latest available data and insights as of January 2026.

Global Semiconductor CVD Equipment Market Trends and Insights

Drivers Impact Analysis*

Intensifying 2 nm And Below Logic-Node Race Drives Higher ALD And CVD Tool Counts

Gate-all-around architectures below the 2-nanometer threshold add 40-50% more deposition steps than FinFET predecessors, lifting tool intensity per wafer starts by roughly 1.8x. TSMC’s N2 process, in high-volume manufacturing since late 2025, relies on cyclic plasma-enhanced ALD for high-k dielectrics and selective tungsten CVD for contacts, whereas Samsung integrates backside power delivery that inserts repeat planarization-and-re-deposit loops. Intel’s 18A node, slated for the second half of 2026, combines RibbonFET and PowerVia features that demand hybrid ALD-CVD chambers able to toggle thermal and plasma modes under a single vacuum. A single leading-edge fab therefore purchases 80–100 process chambers, resulting in USD 2–3 billion in incremental deposition spend per site.

Explosive SiC/GaN Power-Device Capex For EV And Renewables

Wolfspeed, Infineon, and onsemi each broke ground on 200-millimeter silicon carbide fabs that, together, exceeded USD 10 billion in 2025 capital plans. Metal-organic CVD reactors constitute roughly one-quarter of those budgets because SiC drift-layer growth rates remain throughput-limited. Gallium-nitride adoption in data-center power supplies has pushed compound-semiconductor foundries to 85% utilization, triggering long-term equipment orders for AIXTRON planetary reactors. With wide-bandgap wafer starts set to rise 18% annually through 2030, the semiconductor CVD equipment market will see demand tilt toward specialized metal-organic platforms.

3D-NAND Less than 400-Layer Roadmaps Need Ultra-High-AR Gap-Fill Systems

Samsung’s 400-layer V-NAND and SK Hynix’s 321-layer design both exceed 100:1 aspect ratios where conventional PECVD voids compromise cell endurance. Manufacturers are adopting hybrid ALD-CVD sequences that alternate thermal and plasma exposure to achieve bottom-up fills with 2% void density, albeit at the expense of throughput. Each 100-k-wafer-per-month NAND fab consequently requires 30-40 next-generation gap-fill chambers priced at USD 12-18 million apiece, lifting memory deposition outlays by 60% across the forecast window.

CHIPS-Style Incentives Spawning Less than 30 New Green-Field Fabs Worldwide

Direct grants and tax credits in the United States, Europe, Japan, and India unlocked 27 fabrication projects between 2024 and 2025 that collectively earmark USD 420 billion for construction and tooling. Deposition accounts for nearly 15% of typical fab capex, implying demand for roughly 2,500 chambers by 2030. While permitting delays have stretched U.S. ground-break schedules, committed subsidies continue to anchor equipment pipelines, shielding the semiconductor chemical vapor deposition (CVD) equipment market from cyclical softness in consumer-device demand.

Restraints Impact Analysis*

EUR 50 Million-Plus Tool Price And Long ROIC Deter Smaller Foundries

Atomic-layer-deposition clusters configured for gate-all-around logic list above EUR 50 million (USD 56.5 million) and carry annual service contracts worth an additional 8-12% of the initial spend. Mature-node specialists, therefore, extend the effective life of refurbished PECVD chambers to 12 years, slowing replacement velocity. Capital-intensity disparity concentrates 78% of global deposition purchases among the top-10 manufacturers, creating a two-tier customer landscape that tempers expansion at second-tier fabs.

U.S.–China Export Controls Limit Addressable Sales In Greater than or Equal to 15% Of Market

The U.S. Bureau of Industry and Security’s December 2024 rule extended licensing to any tool capable of sub-14 nanometer gate-all-around fabrication, eliminating 15-18% of the previous total addressable market overnight. Chinese fabs pivoted to domestic suppliers NAURA Technology and AMEC, yet chamber-to-chamber uniformity and MTBM remain below Western benchmarks, constraining international penetration. The semiconductor CVD equipment market therefore re-balances toward Taiwan, South Korea, and the United States, which have each accelerated on-shore capacity plans to mitigate geopolitical risk.

*Our forecasts treat driver/restraint impacts as directional, not additive. The impact forecasts reflect baseline growth, mix effects, and variable interactions.

Segment Analysis

By Application: Foundries Lead, Power-Device Fabs Accelerate

Foundry operations generated 41.64% of 2025 revenue as TSMC and Samsung ramped 3 nanometer and 2 nanometer nodes, anchoring the semiconductor CVD equipment market. Power and analog fabs are projected to advance at a 6.04% CAGR, the highest among applications, as electric vehicles and renewable-energy converters require thick epitaxial layers formed by low-pressure CVD. Memory accounted for 19% but sees the steepest tool-intensity gains from 3D-NAND scaling. Integrated device manufacturers contributed 23%, balancing single-wafer clusters for logic with batch furnaces for cost-sensitive analog lines. LED and optoelectronics remain niche at 6% yet gain momentum from micro-LED and LiDAR adoption.

Foundries are expected to maintain roughly 40% share through 2031, but growth moderates because mature-node lines increasingly retrofit existing chambers rather than purchase new platforms. In contrast, power-device capacity is expanding aggressively in Germany, the United States, and Malaysia, lifting specialty MOCVD demand. Memory spending remains cyclical, hinging on HBM and NAND pricing. The semiconductor chemical vapor deposition equipment market size tied to LED production will fluctuate with augmented-reality display roadmaps.

By Equipment Configuration: Single-Wafer Leads, Batch Furnaces Surge

Single-wafer clusters accounted for 45.09% of 2025 installations, underpinning every leading-edge logic and memory roadmap. Batch vertical furnaces, however, are expected to grow at a 6.18% CAGR as 28-nanometer and 40-nanometer analog fabs trade process precision for 40-50% lower cost per wafer. Dual-chamber clusters accounted for 18% by blending throughput with flexibility, while planetary reactors accounted for 12%, largely in compound-semiconductor MOCVD. Legacy single-chamber and pilot tools filled the remainder.

Gate-all-around devices achieve within-wafer uniformity of less than or equal to 1%, cementing single-wafer relevance at the frontier. Still, the global wafer-start mix remains 72% mature nodes, allowing vertical furnaces to reclaim share where ±5% tolerance suffices. Dual-chamber designs are gaining popularity for hybrid ALD-CVD stacks, shaving 30% off cycle time. Planetary reactors stay competitive in LED epitaxy but face single-wafer encroachment for GaN power devices.

By Wafer Size: 300 mm Dominates, 450 mm Inches Forward

The semiconductor CVD equipment market size tied to 300 millimeter production stood at 69.34% in 2025, cemented by more than 140 active fabs. 200-millimeter tools accounted for 24% of capacity, as silicon-carbide and gallium-nitride capacity surged. The 450 millimeter class remains less than 1% but is projected to grow 5.81% annually once Japan and Europe launch pilot lines aimed at 30-40% die-cost reduction. Sub-150-millimeter tools remain at 6% for GaAs RF devices and legacy SOI.

TSMC, Samsung, and Intel collectively pledged USD 85 billion toward new 300 millimeter capacity for 2024-2026, but tool shipments will slow to a 5.1% CAGR as retrofit programs mature. The 450-millimeter revival is driven by AI processors that strain 300-millimeter reticle limits; prototype PECVD and ALD platforms are due by 2028. Meanwhile, 200 millimeter MOCVD reactors are enjoying a renaissance as automotive OEMs demand vertically integrated SiC supply.

By End-User Type: Pure-Play Foundries Lead, Fabless Institutes Accelerate

Pure-play foundries secured 52.61% of 2025 revenue, with TSMC alone near one-third of the global total. Integrated device manufacturers, at about 28%, blend captive logic and analog lines. Memory companies delivered about 14%, and fabless design houses plus research institutes contributed about 5% yet are forecast to rise 6.66% annually as chiplet development centers proliferate.

Foundry capex will hover near 40% share but slow in growth because mature-node lines optimize existing clusters. Fabless institutes are internalizing pilot capability to shorten time-to-market, purchasing small-lot ALD-CVD hybrids with sub-angstrom control. Integrated device manufacturers open their fabs to external customers, demanding versatile dual-chamber tools. Memory spending stays cyclical, peaking with every NAND layer migration, while universities rely on atmospheric-pressure CVD benches to test emerging materials.

Complete Report Scope:

• By Application
  • Foundry
  • IDM
  • Memory Manufacturers
  • Power and Analog Device Fabs
  • LEDs and Optoelectronics
• By Equipment Configuration
  • Single-Wafer Cluster
  • Batch Vertical Furnace
  • Dual-Chamber Cluster
  • Planetary Multi-Wafer Reactor
• By Wafer Size
  • Less Than or Equal to 150 mm
  • 200 mm
  • 300 mm
  • 450 mm
• By End-User Type
  • Pure-Play Foundries
  • Integrated Device Manufacturers
  • Memory Companies
  • Fabless and R&D Institutes
• By Geography
  • North America
    • United States
    • Canada
    • Mexico
  • South America
    • Brazil
    • Argentina
    • Rest of South America
  • Europe
    • Germany
    • United Kingdom
    • France
    • Italy
    • Spain
    • Rest of Europe
  • Asia-Pacific
    • China
    • Japan
    • India
    • South Korea
    • ASEAN
    • Rest of Asia-Pacific
  • Middle East
    • Saudi Arabia
    • United Arab Emirates
    • Rest of Middle East
  • Africa
    • South Africa
    • Nigeria
    • Rest of Africa

Geography Analysis

Asia-Pacific retained 47.57% of 2025 revenue and is projected to deliver a 7.83% CAGR through 2031 as TSMC, Samsung, and SK Hynix add 1 million wafer starts per month of leading-edge and power capacity. Chinese mature-node demand persists despite export controls, with NAURA Technology and AMEC lifting their local share to 22%. Japan’s JPY 2 trillion subsidy pool secures both TSMC’s Kumamoto and Micron’s Hiroshima expansions. Southeast Asia continues to absorb back-end and power-device investments, including Infineon’s 200 millimeter SiC line in Malaysia.

North America generated 28% of 2025 revenue, buoyed by USD 52.7 billion in CHIPS subsidies that anchor Intel, Micron, and Texas Instruments expansions. However, a 5.2% forecast CAGR trails Asia-Pacific because permitting delays push several U.S. fabs into 2027-2028 completion windows and because many projects target mature-node analog production with lower tool intensity. Canada’s silicon-photonics ecosystem and Mexico’s emerging wafer-level packaging lines add niche but growing demand.

Europe captured 18% of 2025 revenue and will expand at 4.8% through 2031. Intel’s EUR 30 billion (USD 35.07 billion) Magdeburg fab, TSMC’s EUR 10 billion (USD 11.69 billion) Dresden joint venture, and Infineon’s EUR 5 billion (USD 5.84 billion) PowerFab drive near-term orders. Strict environmental mandates raise PECVD system costs by 15-20% as in-situ abatement becomes compulsory. The Middle East and Africa and South America collectively hold less than 7% but may unlock incremental demand should proposed fabs in Abu Dhabi or government-funded Brazilian lines proceed.

Regulatory Landscape

Semiconductor CVD equipment shipments are increasingly shaped by export-control licensing and environmental compliance requirements that affect both tool eligibility and fab permitting. In the United States, the Department of Commerce Bureau of Industry and Security (BIS) expanded semiconductor manufacturing equipment controls in December 2024 to include licensing for tools capable of sub-14 nm gate-all-around production. This removed an estimated 15-18% of the prior addressable market for some advanced deposition platforms and pushed customers to qualify alternative, compliant tool configurations.

On the sustainability side, fabs and equipment OEMs must align designs with air-emissions and fluorinated-gas constraints, along with safety standards used in tool qualification. The US EPA NESHAP framework for semiconductor manufacturing (40 CFR Part 63, Subpart BBBBB) and EU F-gas rules are tightening requirements for in-situ abatement, leak management, and energy recovery modules on PECVD and related systems. In the EU, Implementing Regulation (EU) 2026/286 (February 2026) introduced targeted exemptions for certain stationary chillers used in semiconductor manufacturing from specific F-gas prohibitions, which is affecting facility-level equipment choices for thermal management and sub-fab infrastructure.

Value Chain Analysis

The semiconductor CVD equipment value chain starts with upstream suppliers of vacuum subsystems, RF power, gas delivery, high-purity ceramics, valves, and process control electronics, then moves into OEM integration (process chamber design, plasma sources, software, safety and abatement), factory acceptance testing, and field installation supported by long-term service. Critical subsystems often drive tool lead times, and constrained components such as high-purity ceramic parts, RF generators, and vacuum pumps are commonly cited in the 12-20 month range. As a result, multi-sourcing, redesign-to-available components, and regionalized supply arrangements matter for on-time fab ramps.

Downstream demand concentrates among pure-play foundries, IDMs, and memory manufacturers that qualify tools against node-specific process-of-record requirements, and then lock in recurring revenue through spares, upgrades, and service contracts. The chain is increasingly reinforced by co-development with research institutes and device makers to de-risk new film stacks and scale high-aspect-ratio gapfill. Lam Research expanded R&D collaborations with CEA-Leti (February 2026) and IBM (March 2026) around specialty technologies and sub-1 nm logic scaling, strengthening the link between process know-how and OEM tool roadmaps. In compound semiconductors, OEM-to-device-maker linkages also matter, including AIXTRON supplying Renesas with Planetary G5+C MOCVD systems (May 2026) for GaN power electronics expansion, which extends consumables, maintenance, and process support deeper into the equipment value chain.

Competitive Landscape

Applied Materials, Lam Research, and Tokyo Electron together held roughly 60% of 2025 deposition revenue yet face targeted competition. ASM International dominates hybrid ALD-CVD nanosheet platforms, AIXTRON leads metal-organic CVD for wide-bandgap devices, and Kokusai Electric commands batch furnaces in mature nodes. White-space innovation now centers on hybrid clusters that marry ALD and PECVD under one vacuum to reduce interface contamination, and on atmospheric-pressure epitaxial tools that eliminate pumps.

Applied Materials locks customers into its Centura and Endura platforms by integrating metrology and etch, securing multi-year service contracts worth an estimated USD 3.5 billion. Lam Research’s pulsed-RF Striker chambers achieve aspect-ratio-independent profiles in 100:1 3D-NAND trenches, validated by SK Hynix. Tokyo Electron’s Tactras furnace leverages optical emission spectroscopy for sub-3% thickness variation, winning GlobalFoundries and Tower Semiconductor design-ins. Chinese newcomers NAURA Technology and AMEC captured 22% of the domestic mature-node market by 2025, although MTBM gaps limit export prospects.

Wonik IPS and Jusung Engineering are piloting in-situ plasma-clean batch designs that extend maintenance intervals to 8,000 wafers. Veeco has partnered with a European consortium to scale GaN-on-silicon MOCVD toward 300 millimeter substrates. Compliance with SEMI S2/S8 safety standards and ISO 14001 environmental norms remains mandatory for tool qualification, forcing all suppliers to embed abatement and energy-recovery modules.

Market Opportunities and Future Outlook

White space in semiconductor CVD equipment is expanding where device architectures increase deposition step counts and tighten within-feature conformality requirements, especially for gate-all-around logic, high-layer-count HBM/DRAM, and extreme-aspect-ratio 3D NAND. Tool makers are responding with hybrid ALD-CVD platforms, advanced PECVD film engineering, and new metal-fill approaches to address reliability and resistance challenges in scaled interconnects and memory wordlines. A near-term indicator is productization around advanced memory scaling: Applied Materials introduced the Producer Avila 2 PECVD system (June 2026) targeting mechanical stability for ultra-thin DRAM dies used in high-layer-count HBM designs, while Lam Research highlighted Striker ALD for DRAM-oriented dielectric gapfill and ALTUS Halo for molybdenum-based wordline schemes (February 2026). Together, these releases reflect a push toward higher conformality and specialized materials in deposition roadmaps.

Policy and compliance-driven localization also creates opportunity across tool configurations and service, particularly as CHIPS-style incentives translate into greenfield projects and export rules fragment the served market by capability class. The EU moved to reinforce industrial-scale production and resilience with a Chips Act 2.0 proposal (June 2026), while US BIS export controls continue to shape which advanced deposition systems can be shipped. This is pushing OEMs to offer compliant variants, improve traceability across the supply chain, and expand field support closer to subsidized fab clusters. Environmental mandates, including tightening F-gas and emissions compliance, further increase the addressable scope for integrated abatement, energy recovery, and retrofit packages on PECVD lines, especially in regions where permitting and operational reporting requirements are becoming more prescriptive.

Recent Industry Developments

• June 2026: Applied Materials introduced the Producer Avila 2 PECVD system aimed at improving the mechanical stability of ultra-thin DRAM dies used in high-layer-count HBM designs. The launch reinforces deposition innovation as a lever for memory packaging constraints and supports tool differentiation beyond traditional film thickness and uniformity metrics.
• February 2026: Lam Research announced the Striker ALD platform for dielectric gapfill, spacer, and barrier layers targeting advanced DRAM scaling to 4F2 cell densities. By positioning ALD capability alongside CVD in critical memory steps, Lam strengthens its pull-through for integrated deposition roadmaps where conformality and defect control drive yield.
• September 2025: Lam Research entered a cross-licensing and collaboration agreement with JSR Corporation and Inpria Corporation to advance semiconductor materials and processes, including high-purity precursor and resist-related integration relevant to advanced deposition flows. The agreement supports faster adoption of new film chemistries by reducing IP friction and aligning materials readiness with next-generation tool platforms.

List of Companies Covered in this Report:

• Applied Materials, Inc.
• Lam Research Corporation
• Tokyo Electron Limited
• ASM International N.V.
• AIXTRON SE
• Veeco Instruments Inc.
• ULVAC, Inc.
• Kokusai Electric Corporation
• Advanced Micro-Fabrication Equipment Inc. China
• NAURA Technology Group Co., Ltd.
• Wonik IPS Co., Ltd.
• Eugene Technology Co., Ltd.
• Jusung Engineering Co., Ltd.
• TES Co., Ltd.
• SPTS Technologies Ltd.
• CVD Equipment Corporation
• Piotech Co., Ltd.
• Plasma-Therm LLC
• Oxford Instruments plc
• Taiyo Nippon Sanso Corporation
• Topecsh Co., Ltd.
• TDK Corporation
• Lumichem Korea Co., Ltd.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

Table of Contents

1 INTRODUCTION
1.1 Study Assumptions and Market Definition
1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE
4.1 Market Overview
4.2 Market Drivers
4.2.1 Intensifying 2 Nm-And-Below Logic Node Race Drives Higher ALD + CVD Tool Counts
4.2.2 Explosive SIC/GaN Power-Device Capex For EV and Renewables
4.2.3 3D-NAND Less Than 400-Layer Roadmaps Need Ultra-High-AR Gap-Fill Systems
4.2.4 CHIPS-Style Incentives Spawning Less Than 30 New Green-Field Fabs Worldwide
4.2.5 AI-Enabled Process-Control Lowers Coo, Boosting Retrofit Demand
4.2.6 Sub-Fab Energy-Recovery Mandates Favour Low-Emission PECVD Lines*
4.3 Market Restraints
4.3.1 EUR 50 Million Tool Price And Long ROIC Deter Smaller Foundries
4.3.2 U.S.-China Export Controls Limit Addressable Sales In Greater than 15% Of Market
4.3.3 Scarcity Of High-Purity Metal-Organic Precursors For III-V Epi
4.3.4 F-Gas Phase-Out Rules Trigger Costly Process Redesigns*
4.4 Industry Value Chain Analysis
4.5 Regulatory Landscape
4.6 Technological Outlook
4.7 Porter’s Five Forces Analysis
4.7.1 Bargaining Power of Suppliers
4.7.2 Bargaining Power of Buyers
4.7.3 Threat of New Entrants
4.7.4 Threat of Substitute Products
4.7.5 Degree of Competition
4.8 Investment Analysis

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)
5.1 By Application
5.1.1 Foundry
5.1.2 IDM
5.1.3 Memory Manufacturers
5.1.4 Power and Analog Device Fabs
5.1.5 LEDs and Optoelectronics
5.2 By Equipment Configuration
5.2.1 Single-Wafer Cluster
5.2.2 Batch Vertical Furnace
5.2.3 Dual-Chamber Cluster
5.2.4 Planetary Multi-Wafer Reactor
5.3 By Wafer Size
5.3.1 Less Than or Equal to 150 mm
5.3.2 200 mm
5.3.3 300 mm
5.3.4 450 mm
5.4 By End-User Type
5.4.1 Pure-Play Foundries
5.4.2 Integrated Device Manufacturers
5.4.3 Memory Companies
5.4.4 Fabless and R&D Institutes
5.5 By Geography
5.5.1 North America
5.5.1.1 United States
5.5.1.2 Canada
5.5.1.3 Mexico
5.5.2 South America
5.5.2.1 Brazil
5.5.2.2 Argentina
5.5.2.3 Rest of South America
5.5.3 Europe
5.5.3.1 Germany
5.5.3.2 United Kingdom
5.5.3.3 France
5.5.3.4 Italy
5.5.3.5 Spain
5.5.3.6 Rest of Europe
5.5.4 Asia-Pacific
5.5.4.1 China
5.5.4.2 Japan
5.5.4.3 India
5.5.4.4 South Korea
5.5.4.5 ASEAN
5.5.4.6 Rest of Asia-Pacific
5.5.5 Middle East
5.5.5.1 Saudi Arabia
5.5.5.2 United Arab Emirates
5.5.5.3 Rest of Middle East
5.5.6 Africa
5.5.6.1 South Africa
5.5.6.2 Nigeria
5.5.6.3 Rest of Africa

6 COMPETITIVE LANDSCAPE
6.1 Market Concentration
6.2 Strategic Moves
6.3 Market Share Analysis
6.4 Company Profiles (includes Global-level Overview, Market-level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
6.4.1 Applied Materials, Inc.
6.4.2 Lam Research Corporation
6.4.3 Tokyo Electron Limited
6.4.4 ASM International N.V.
6.4.5 AIXTRON SE
6.4.6 Veeco Instruments Inc.
6.4.7 ULVAC, Inc.
6.4.8 Kokusai Electric Corporation
6.4.9 Advanced Micro-Fabrication Equipment Inc. China
6.4.10 NAURA Technology Group Co., Ltd.
6.4.11 Wonik IPS Co., Ltd.
6.4.12 Eugene Technology Co., Ltd.
6.4.13 Jusung Engineering Co., Ltd.
6.4.14 TES Co., Ltd.
6.4.15 SPTS Technologies Ltd.
6.4.16 CVD Equipment Corporation
6.4.17 Piotech Co., Ltd.
6.4.18 Plasma-Therm LLC
6.4.19 Oxford Instruments plc
6.4.20 Taiyo Nippon Sanso Corporation
6.4.21 Topecsh Co., Ltd.
6.4.22 TDK Corporation
6.4.23 Lumichem Korea Co., Ltd.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK
7.1 White-space and Unmet-need Assessment

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